1N4748A

Zener Diode 1N4748A Product Introduction:

With the continuous development of technology, the application of electronic products is becoming increasingly widespread, especially in the current information age, where electronic technology is widely used. Among these electronic products, circuit stability is particularly important as it can directly determine the lifespan and operational efficiency of the product. In circuit design, Zener diodes are an important component of circuit stability, and silicon planar power Zener diodes are the most commonly used and high-performance Zener diodes, with the characteristics of stable circuits and high rated power.

Silicon planar power Zener diodes are widely used in fields such as voltage stabilizing circuits, power management, sensors, overvoltage protection, televisions, network equipment, automotive electronics, integrated circuits, etc. They play an irreplaceable role in various circuits. In application, due to the fact that the steady-state voltage exhibited by Zener diodes is related to temperature, current, and the characteristics of components, it is necessary to consider the influence of these factors.

The standard Zener voltage tolerance of silicon planar power Zener diodes is ± 5%, which is widely used in situations where circuit stability is high and power consumption is low. Its steady-state voltage is always maintained at the specified steady-state operating point, which can make the entire circuit work more stable and prevent circuit failure.

Zener Diode 1N4748A Datasheet:

1N4001:

1N5817:

1N4148: This is a micro signal diode mainly used in high-speed switching circuits and low-power circuits, characterized by low reverse leakage current, fast turn-on speed, and low response time.

1N5711: This is a high-speed switching diode mainly used in radar and rangefinder applications, characterized by short turn-on time and low reverse leakage current.

1N5399:

★ 2005 developed TVS chip manufacturing process 2005 developed TVS chip manufacturing process;
★ 2006 developed 2006 developed zzener ener chip manufacturing chip manufacturing proces process;
★ 2009 developed epitaxial technology to manufacture SF chip process 2009 developed epitaxial technology to manufacture SF chip process ;
2010 developed epitaxial technology to manufacture DB3 chip process 2010 developed epitaxial technology to manufacture DB3 chip process
★ 2010 developed epitaxial technology to manufacture DB3 chip process 2010 developed epitaxial technology to manufacture DB3 chip process;
★ 2011 developed DU3 chip manufacturing 2011 developed DU3 chip manufacturing proces proces with patent rights with patent rights;
★2017 developed high power TVS chip

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